Samsung has begun mass production of its fifth generation V-NAND memory. Using over 90 layers compared to the previous generation’s 64, the new memory achieves nearly a 40 percent improvement in performance.
Fifth generation chips arrive in 256 gigabit (32GB) capacities. Each chip can reach speeds of up to 1.4 Gbps and makes use of the Toggle DDR 4.0 interface. Despite having more layers, the chips are not all that much thicker. A 20 percent reduction in layer thickness has been achieved as a result of improvements made to the atomic layer deposition process used during fabrication.
