Everspin today announced it’s shipping samples of the industry’s most dense magnetoresistive RAM (MRAM), which can replace standard DRAM for write caching operations as it’s 10,000 times faster than NAND flash.
The non-volatile memory, which Everspin calls spin-torque MRAM (ST-MRAM), is the company’s third generation of MRAM and it is aimed at replacing persistent DRAM on servers and storage arrays.
Spin torque is simply a method of changing data bits from ones to zeros or vice versa by using a tiny bit of voltage to flip them up or down versus left or right, as is done with conventional MRAM; it also offers greater memory densities and requires 40% to 50% less power.
